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NAND256W3A0BN6集成电路(IC)的存储器规格书PDF中文资料

NAND256W3A0BN6
厂商型号

NAND256W3A0BN6

参数属性

NAND256W3A0BN6 封装/外壳为48-TFSOP(0.724",18.40mm 宽);包装为卷带(TR);类别为集成电路(IC)的存储器;产品描述:IC FLASH 256MBIT PARALLEL 48TSOP

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

封装外壳

48-TFSOP(0.724",18.40mm 宽)

文件大小

916.59 Kbytes

页面数量

57

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体集团官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-5-19 23:00:00

人工找货

NAND256W3A0BN6价格和库存,欢迎联系客服免费人工找货

NAND256W3A0BN6规格书详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

  • 产品编号:

    NAND256W3A0BN6F TR

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    卷带(TR)

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存 - NAND

  • 存储容量:

    256Mb(32M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    50ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFSOP(0.724",18.40mm 宽)

  • 供应商器件封装:

    48-TSOP I

  • 描述:

    IC FLASH 256MBIT PARALLEL 48TSOP

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
14
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ST
24+
TSOP
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
Micron
1844+
BGA
9852
只做原装正品假一赔十为客户做到零风险!!
询价
ST
00+
TSOP
7
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Micron Technology Inc.
21+
90-LFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
ST
6000
面议
19
DIP/SMD
询价
Micron
22+
SMD
25000
只做原装进口现货,专注配单
询价
Micron Technology Inc
23+/24+
48-TFSOP
8600
只供原装进口公司现货+可订货
询价
ST/意法
23+
TSOP48
13021
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
MICRON/美光
20+
NA
20000
美光专营原装正品
询价