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NAND128W3A2BN6集成电路(IC)的存储器规格书PDF中文资料

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厂商型号

NAND128W3A2BN6

参数属性

NAND128W3A2BN6 封装/外壳为48-TFSOP(0.724",18.40mm 宽);包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC FLASH 128MBIT PARALLEL 48TSOP

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

封装外壳

48-TFSOP(0.724",18.40mm 宽)

文件大小

916.59 Kbytes

页面数量

57

生产厂商

STMICROELECTRONICS

中文名称

意法半导体

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-11-28 16:00:00

人工找货

NAND128W3A2BN6价格和库存,欢迎联系客服免费人工找货

NAND128W3A2BN6规格书详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

  • 产品编号:

    NAND128W3A2BN6F TR

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存 - NAND

  • 存储容量:

    128Mb(16M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    50ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFSOP(0.724",18.40mm 宽)

  • 供应商器件封装:

    48-TSOP

  • 描述:

    IC FLASH 128MBIT PARALLEL 48TSOP

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
17+
TSOP
6200
100%原装正品现货
询价
ST/意法
24+
TSSOP48
30000
房间原装现货特价热卖,有单详谈
询价
ST
25+
TSOP
2659
原装正品!公司现货!欢迎来电洽谈!
询价
MICRON/美光
23+
TSOP
98900
原厂原装正品现货!!
询价
MICRON/美光
25+
TSOP
996880
只做原装,欢迎来电资询
询价
ST
2025+
TSOP
3685
全新原厂原装产品、公司现货销售
询价
ST
23+
TSSOP48
8678
原厂原装
询价
ST/意法
24+
TSSOP
3000
全新原装现货 优势库存
询价
MICRON
25+
TSOP48
6489
原厂原装,价格优势
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价