首页>NAND01GW4A2CN6>规格书详情

NAND01GW4A2CN6中文资料PDF规格书

NAND01GW4A2CN6
厂商型号

NAND01GW4A2CN6

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件大小

916.59 Kbytes

页面数量

57

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-18 15:20:00

NAND01GW4A2CN6规格书详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

  • 型号:

    NAND01GW4A2CN6

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit(x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

供应商 型号 品牌 批号 封装 库存 备注 价格
NUYX
23+
5153LFBGA
7642
原装现货
询价
ST/意法
22+
BGA
17800
原装正品
询价
STMicroelectronics
18+
ICFLASH1GBIT48TSOP
6580
公司原装现货
询价
STMicroelectronics
21+
48-TSOP
56200
一级代理/放心采购
询价
STMicroelectronics
24+
48-TFSOP(0.724,18.40mm 宽)
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
NUMONYX
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
NUMONYX
09+
BGA
23400
现货-ROHO
询价
ST
22+
48TSOP
9000
原厂渠道,现货配单
询价
STMicroelectronics
2022
ICFLASH1GBIT48TSOP
5058
原厂原装正品,价格超越代理
询价
ST
22+
TSOP48
360000
进口原装房间现货实库实数
询价