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NAND01GW3B2CZA6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GW3B2CZA6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GW3B2CZA6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

NUMONYX

numonyx

NAND01GW3B2CZA6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GW3B2CZA6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GW3B2CZA6E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

NUMONYX

numonyx

NAND01GW3B2CZA6E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    NAND01GW3B2CZA6F

  • 制造商:

    Micron Technology Inc

  • 功能描述:

    Flash Mem Parallel 3V/3.3V 1G-Bit 128M x 8 25us 63-Pin VFBGA T/R

供应商型号品牌批号封装库存备注价格
MICRON
24+
BGA
1000
MICRON专营原装进口现货
询价
MICRON美光
24+
BGA
13500
免费送样原盒原包现货一手渠道联系
询价
Micron
17+
BGA
6200
询价
Micron
2020+
BGA
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MICRON/美光
23+
BGA
9920
原装正品,支持实单
询价
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ST/意法
22+
BGA
17800
原装正品
询价
ST
21+
BGA
23480
询价
ST
09+
TSOP
700
优势
询价
ST/意法
24+
TSSOP48
23000
只做正品原装现货
询价
更多NAND01GW3B2CZA6F供应商 更新时间2025-5-2 14:26:00