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NAND01GR4B2BN6F中文资料PDF规格书
NAND01GR4B2BN6F规格书详情
Features
■ NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
■ Supply voltage: 1.8 V/3 V
■ Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■ Block size
– x8 device: (128K + 4K spare) bytes
– x16 device: (64K + 2K spare) words
■ Page read/program
– Random access: 25 μs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 μs (typ)
■ Copy back program mode
■ Cache read mode
■ Fast block erase: 2 ms (typ)
■ Status register
■ Electronic signature
■ Chip enable ‘don’t care’
■ Security features
– OTP area
– Serial number (unique ID)
– Non-volatile protection option
■ Data protection
– Hardware block locking
– Hardware program/erase locked during
power transitions
■ ONFI 1.0 support
– Cache read
– Read signature
– Read
■ Data integrity
– 100,000 program/erase cycles per block
(with ECC)
– 10 years data retention
■ RoHS compliant packages
■ Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
产品属性
- 型号:
NAND01GR4B2BN6F
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
TSOP48 |
20000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
STM |
2023+ |
TSSOP48 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
STM |
2016+ |
TSSOP48 |
6523 |
只做原装正品现货!或订货! |
询价 | ||
NUMONYX |
11+ |
BGA |
73 |
向鸿原装正品/代理渠道/现货优势 |
询价 | ||
ST/意法 |
22+ |
BGA |
9000 |
原装正品 |
询价 | ||
ST |
2020+ |
TSOP-48 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST |
22+ |
TSOP-48 |
30000 |
原装正品 |
询价 | ||
MICRON |
19+ |
TSSOP |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
NUMONYX |
BGA |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
ST/意法 |
23+ |
TSSOP48 |
50000 |
全新原装正品现货,支持订货 |
询价 |