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NAND01GR4A0AN6T中文资料意法半导体数据手册PDF规格书

NAND01GR4A0AN6T
厂商型号

NAND01GR4A0AN6T

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件大小

916.59 Kbytes

页面数量

57

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-10-31 22:58:00

NAND01GR4A0AN6T规格书详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

  • 型号:

    NAND01GR4A0AN6T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit(x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

供应商 型号 品牌 批号 封装 库存 备注 价格
NUMONYX
2016+
BGA
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
2020+
TSOP-48
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST/意法
23+
NA/
3379
原装现货,当天可交货,原型号开票
询价
STM
1146+
TSSOP48
129
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询价
ST
21+
BGA
6000
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询价
STM
23+
TSSOP48
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
STM
2016+
TSSOP48
6523
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询价
ST
22+
BGA
12245
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STM
24+
TSSOP48
5000
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询价
ST/意法
23+
TSOP48
20000
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询价