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NAND01GR3B2BN6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GR3B2BN6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GR3B2BN6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

NUMONYX

numonyx

NAND01GR3B2BN6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NAND01GR3B2BN6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GR3B2BN6E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

NUMONYX

numonyx

NAND01GR3B2BN6E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    NAND01GR3B2BN6F

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

供应商型号品牌批号封装库存备注价格
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
ST
20+
BGA
11520
特价全新原装公司现货
询价
ST
23+
BGA
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
VFBGA63
50000
全新原装正品现货,支持订货
询价
ST
21+
BGA
10000
原装现货假一罚十
询价
ST
22+
VFBGA63
3000
原装正品,支持实单
询价
ST
1726+
VFBGA63
38
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST/意法
23+
VFBGA63
89630
当天发货全新原装现货
询价
ST/意法
24+
NA/
3362
原装现货,当天可交货,原型号开票
询价
ST
2025+
VFBGA63
3550
全新原厂原装产品、公司现货销售
询价
更多NAND01GR3B2BN6F供应商 更新时间2025-5-9 19:00:00