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NAND01GR3A2AZA1E中文资料PDF规格书

NAND01GR3A2AZA1E
厂商型号

NAND01GR3A2AZA1E

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件大小

916.59 Kbytes

页面数量

57

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-3 10:06:00

NAND01GR3A2AZA1E规格书详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

  • 型号:

    NAND01GR3A2AZA1E

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit(x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
BGA
6000
原装现货,长期供应,终端可账期
询价
ST/STMicroelectronics/意法半导
21+
BGA
200
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ST
21+
BGA
960
进口原装正品现货
询价
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
询价
ST
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
ST
BGA
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST/意法
BGA
265209
假一罚十原包原标签常备现货!
询价
ST
20+
BGA
25000
全新原装现货,假一赔十
询价
ST意法半导体
24+23+
BGA
12580
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
原装正品
BGA
200
国内领先的集成电路专业配单!量大可发货!可开17%增值
询价