512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

文件：383.4 Kbytes 页数：59 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes 页数：64 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

文件：1.6385 Mbytes 页数：67 Pages

NUMONYX

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes 页数：60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes 页数：62 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

ST

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

Micron

美光