N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Control • Industrial • Load Switch • ORing

文件：228.2 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION

DESCRIPTION The NDL7515P Series is a 1 310 nm newly developed Multiple Quantum Well (MQW) structure pulsed laser diode module with single mode fiber. It is designed for light source of optical measurement equipment (OTDR). FEATURES • Output power Pf = 20 mW MIN.@IFP = 400 mA, TC = 25 °C*1 • Lo

文件：61.37 Kbytes 页数：8 Pages

NEC

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InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：63.59 Kbytes 页数：8 Pages

NEC

瑞萨

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：60.61 Kbytes 页数：8 Pages

NEC

瑞萨