N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

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FAIRCHILD

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ONSEMI

安森美半导体

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

文件：21.72 Kbytes 页数：2 Pages

NTE

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

文件：2.068389 Mbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

10 mm Seven Segment Display

Description The TDS.31.. series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum

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VISHAYVishay Siliconix

威世威世科技公司