1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 页数：30 Pages

INTEL

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 页数：30 Pages

INTEL

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 页数：30 Pages

INTEL

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 页数：30 Pages

INTEL

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

文件：878.8 Kbytes 页数：38 Pages

INTEL

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

文件：878.8 Kbytes 页数：38 Pages

INTEL

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

文件：878.8 Kbytes 页数：38 Pages

INTEL

英特尔

SFP plus 10Gbase-CU Passive Twinax Copper Cable, Black, 1.5M (5-ft)

文件：479.87 Kbytes 页数：2 Pages

TRIPPLITE

SFP 10Gbase-CU Passive Twinax Copper Cable, SFP-H10GB-CU1-5M Compatible, Black, 1.5M (5-ft.)

文件：156.55 Kbytes 页数：3 Pages

TRIPPLITE

SFP plus 10Gbase-CU Passive Twinax Copper Cable,Black, 2.5M (8-ft)

文件：485.1 Kbytes 页数：2 Pages

TRIPPLITE