Features

• Stacked device (two 256Mb die)

• SPI-compatible serial bus interface

• Double transfer rate (DTR) mode

• 2.7–3.6V single supply voltage

• 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode

• 54 MHz (MAX) clock frequency supported for all protocols in DTR mode

• Dual/quad I/O instruction provides increased throughput up to 54 MB/s

• Supported protocols

– Extended SPI, dual I/O, and quad I/O

– DTR mode supported on all

• Execute-in-place (XIP) mode for all three protocols

– Configurable via volatile or nonvolatile registers

– Enables memory to work in XIP mode directly after power-on

• PROGRAM/ERASE SUSPEND operations

• Available protocols

– Available READ operations

– Quad or dual output fast read

– Quad or dual I/O fast read

• Flexible to fit application

– Configurable number of dummy cycles

– Output buffer configurable

• Software reset

• Additional reset pin for selected part numbers 1

• 3-byte and 4-byte addressability mode supported

• 64-byte, user-lockable, one-time programmable (OTP) dedicated area

• Erase capability

– Subsector erase 4KB uniform granularity blocks

– Sector erase 64KB uniform granularity blocks

– Single die erase

• Write protection

– Software write protection applicable to every 64KB sector via volatile lock bit

– Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2,BP3, and TB)

– Additional smart protections, available upon request

• Electronic signature

– JEDEC-standard 2-byte signature (BA20h)

– Unique ID code (UID): 17 read-only bytes, including: Two additional extended device ID bytes to identify device factory options; and customized factory data (14 bytes)

• Minimum 100,000 ERASE cycles per sector

• More than 20 years data retention

• Packages – JEDEC-standard, all RoHS-compliant

– V-PDFN-8/8mm x 6mm (also known as SON, DFPN, MLP, MLF)

– SOP2-16/300mils (also known as SO16W, SO16-Wide, SOIC-16)

– T-PBGA-24b05/6mm x 8mm (also known as TBGA24)

N25Q512A83GSF40G属于集成电路（IC） > 存储器。美国镁光科技有限公司制造生产的N25Q512A83GSF40G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。