N24S128C4DYT3G集成电路（IC）的存储器规格书PDF中文资料

N24S128C4DYT3G属于集成电路（IC）的存储器。由安森美半导体制造生产的N24S128C4DYT3G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The N24S128 is a 128 Kb Serial CMOS EEPROM, internally

organized as 816,384 words of 8 bits each.

They feature a 64-byte page write buffer and support both the

Standard (100 kHz), Fast (400 kHz) and Fast-Plus (1 MHz) I2C

protocol.

The devices also feature a 128-bit factory-set read-only Unique ID,

a 64-byte Secure Data Page that can be permanently locked against

future changes, and Software Write Protection of the entire array.

A Device Configuration Register enables the user to specify the last

3 bits of the Device Address, allowing up to eight N24S128 devices to

be addressed on the same bus.

特性 Features

• Supports Standard, Fast and Fast-Plus I2C Protocol

• 1.7 V to 5.5 V Supply Voltage Range

• 64-byte Page Write Buffer

• Lockable Secure Data Page

• User Programmable Write Protection

• User Programmable Device Address

• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Industrial Temperature Range: −40°C to +85°C

• Ultra-thin 4-ball WLCSP Package

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*