8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit

Overview The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features • S

文件：222.97 Kbytes 页数：9 Pages

NANOAMP

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit

Overview The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features • S

文件：222.97 Kbytes 页数：9 Pages

NANOAMP

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit

Overview The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features • S

文件：222.97 Kbytes 页数：9 Pages

NANOAMP

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit

ONSEMI

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