N04Q1618C2BT2-15I中文资料NANOAMP数据手册PDF规格书

Overview

The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power.

特性 Features

• Multiple Power Supply Ranges

1.1V - 1.3V

1.65V - 1.95V

2.3V - 2.7V

2.7V - 3.6V

• Dual Vcc / VccQ Power Supplies

1.2V Vcc with 3V VccQ

1.8V Vcc with 3V VccQ

2.5V Vcc with 3V VccQ

• Very low standby current

50nA typical for 1.2V operation

• Very low operating current

400µA typical for 1.2V operation at 1µs

• Very low Page Mode operating current

80µA typical for 1.2V operation at 1µs

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Automatic power down to standby mode

• BGA, TSOP and KGD options

• RoHS Compliant