4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features

文件：273.79 Kbytes 页数：11 Pages

NANOAMP

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Features

文件：273.79 Kbytes 页数：11 Pages

NANOAMP