N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 4.7 mΩ max. ( VGS = 10 V, ID = 28 A ) • Low Ciss : Ciss = 3200 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±56 A • RoHS Compliant • Quality Grade : Standard • Applications: For high current switching

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 56A@ TC=25℃ ·Drain Source Voltage -VDSS=40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 4.7 mΩ max. ( VGS = 10 V, ID = 28 A ) • Low Ciss : Ciss = 3200 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±56 A • RoHS Compliant • Quality Grade : Standard • Applications: For high current switching

文件：707.77 Kbytes 页数：7 Pages

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Power MOSFETs with Support for High-efficiency Drive and Low Heat Design

OverviewMOSFETs suitable for switching (motor drive, etc.) and load switch applicationsLow on-resistance, high-speed switching, and high-robustnessLow on-state resistanceRDS(on) = 4.7 mΩ max. ( VGS = 10 V, ID = 28 A )Low Ciss : Ciss = 3200 pF typ. ( VDS = 25 V )High current : ID(DC) = ±56 ARoHS Comp

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