| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PremiumTopEntryAccelerometer,ArmoredBraidedCable Features •PrecisionTopEntryAccelerometer •100mV/g±5 •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmoredCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25MountingStudsIncluded •Sealed | STi Subaru Tecnica International | STi | ||
PremiumTopEntryAccelerometer,Submersible Features •PrecisionTopEntryAccelerometer •100mV/g±5 •150°CMaxTemperatureRange •±80gDynamicRange •IntegralPURCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25MountingStudsIncluded •SealedtoIP68 | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureand3PinMS5015 Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±15and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •3PinMS5015Connector •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Mounting | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureandIntegralArmoredBraidedCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureandSubmersiblePURIntegralCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun | STi Subaru Tecnica International | STi | ||
SmallSignalTransistorPNP-LowNoiseAmplifierTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
EvaluationBoardforADG788TripleSPDTSwitchinChipScalePackage | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
2.5ohm,1.8Vto5.5V,2.5V,-2.5VTriple/QuadSPDTSwitchesinChipScalePackages GENERALDESCRIPTION TheADG786andADG788arelowvoltage,CMOSdevicescomprisingthreeindependentlyselectableSPDT(singlepole,doublethrow)switchesandfourindependentlyselectableSPDTswitchesrespectively. Lowpowerconsumptionandoperatingsupplyrangeof1.8Vto5.5Vanddual±2 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | Zetex Zetex Semiconductors | Zetex | ||
SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | Zetex Zetex Semiconductors | Zetex | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | Zetex Zetex Semiconductors | Zetex | ||
PNPSiliconPlanarMediumPowerHighGainTransistor Features ●Lowequivalenton-resistance;RCE(sat)93mÙat3A. ●Gainof300atIC=2AmpsandVerylowsaturationvoltage. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SOT223PNPSILICONPLANARMEDIUM Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
15VPNPMEDIUMPOWERHIGHGAINTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
15VPNPMEDIUMPOWERHIGHGAINTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES |
详细参数
- 型号：
MZ788
- 制造商：
MICROSEMI
- 制造商全称：
Microsemi Corporation
- 功能描述：
3 WATT GLASS ZENER DIODES
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BGA |
18864 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
SAMSUNG(三星半导体) |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
SAMSUNG |
22+ |
BGA |
145 |
原厂原装,价格优势!13246658303 |
询价 | ||
Samsung |
21+ |
标准封装 |
5000 |
进口原装,订货渠道! |
询价 | ||
SAMSUNG |
20+ |
DNA |
25 |
公司现货,有挂就有货。 |
询价 | ||
Samsung |
NEW |
31 |
询价 | ||||
SAMSUNG |
20+ |
N/A |
1000 |
全新原装亏本出13157115792 |
询价 | ||
SAMSUNG(三星) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
SAMSUNG |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
SAMSUNG |
22+ |
N/A |
560 |
全新原装 |
询价 |
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