31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

The RF Small Signal Line Silicon Lateral FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 6 Volt, 850 MHz: Output Power = 31.

文件：53.38 Kbytes 页数：4 Pages

Motorola

摩托罗拉

HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

The RF Small Signal Line Silicon Lateral FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 5.8 V, 900 MHz: Output Power = 30 d

文件：60.9 Kbytes 页数：4 Pages

Motorola

摩托罗拉

QFN

ATHEL

上传：深圳市鹏兴电子有限公司

BGA

Atmel

爱特梅尔

上传：深圳市向鸿伟业电子有限公司

BGA

Atmel

爱特梅尔

上传：深圳市福田区亿兴成电子商行