MXR9745RT1中文资料31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET数据手册恩XP规格书

描述 Description

The RF Small Signal Line
Silicon Lateral FET
N–Channel Enhancement–Mode MOSFETDesigned for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
• Performance Specifications at 6 Volt, 850 MHz:
    Output Power = 31.5 dBm Min
    Power Gain = 8.5 dB Typ
    Efficiency = 60% Min
• Guaranteed Ruggedness at Load VSWR = 20:1
• Available in Tape and Reel Packaging Options:
    T1 Suffix = 1,000 Units per Reel
• MXR9745RT1 is Gate–Drain Pin Out Reversed.
    All Electricals Same as MXR9745T1