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MXR9745RT1中文资料摩托罗拉数据手册PDF规格书
MXR9745RT1规格书详情
The RF Small Signal Line
Silicon Lateral FET
N–Channel Enhancement–Mode MOSFET
Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
• Performance Specifications at 6 Volt, 850 MHz:
Output Power = 31.5 dBm Min
Power Gain = 8.5 dB Typ
Efficiency = 60 Min
• Guaranteed Ruggedness at Load VSWR = 20:1
• Available in Tape and Reel Packaging Options:
T1 Suffix = 1,000 Units per Reel
• MXR9745RT1 is Gate–Drain Pin Out Reversed.
All Electricals Same as MXR9745T1
产品属性
- 型号：
MXR9745RT1
- 制造商：
MOTOROLA
- 制造商全称：
Motorola, Inc
- 功能描述：
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
