Depletion Mode MOSFETs

MaxPower

迈斯派尔

N-channel MOSFET 600V, 6A, 1.2Ω

Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0

文件：260.45 Kbytes 页数：8 Pages

RENESAS

瑞萨

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

文件：20.66 Kbytes 页数：2 Pages

NTE

ENHANCED TYPE II CALLER ID DECODER WITH STUTTER DIAL TONE DETECTOR

文件：324.01 Kbytes 页数：22 Pages

IDT