Photo SCR Chip

Features • Light Activated Photo SCR • Planar PNPN • High Voltage • Cathode and Gate pads are Aluminum Wire bondable • Anode is backside of die • Backside metallization - Gold • Die Attach methods: eutectic or epoxy

文件：36.92 Kbytes 页数：1 Pages

MICROSEMI

美高森美

Photo SCR Chip

Microchip

微芯科技

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

文件：88.84 Kbytes 页数：7 Pages

PHI

PHI

SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

文件：28.41 Kbytes 页数：2 Pages

EIC

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3

文件：166.8 Kbytes 页数：20 Pages

PHI

PHI