MX608E规格书应用电路贸易商无锡固电ISC-114ic电子网

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NDB608A	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608A	文件：306.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDB608AE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608AE	文件：306.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDB608B	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608B	文件：306.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDB608BE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDB608BE	文件：306.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608A	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608A	文件：296.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608AE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608AE	文件：296.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608B	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608B	文件：296.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NDP608BE	文件：73.89 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDP608BE	文件：296.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=45mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
OPB608	文件：311.63 Kbytes Page：9 Pages	ReflectiveObjectSensor Description TheOPB608consistsofaninfraredemittingdiodeandanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing. Features •Phototransistoroutput •Unfocusedforsensingdiffusesurface •Lowcostplastichousing •Enhancedsignal	Optek OPTEK Technologies	Optek
OPB608A	文件：223.73 Kbytes Page：2 Pages	REFLECTIVEOBJECTSENSORS TheOPB608isareflectiveswitchthatconsistofaninfraredemittingdevice(LEDorVCSEL)andanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing.Boththeemittingdeviceandphototransistorareencapsulatedinavisiblefilteringepoxyex	Optek OPTEK Technologies	Optek
OPB608A	文件：311.63 Kbytes Page：9 Pages	ReflectiveObjectSensor Description TheOPB608consistsofaninfraredemittingdiodeandanNPNsiliconphototransistormounted“side-by-side”onaparallelaxisinablackopaqueplastichousing. Features •Phototransistoroutput •Unfocusedforsensingdiffusesurface •Lowcostplastichousing •Enhancedsignal	Optek OPTEK Technologies	Optek
OPB608A	文件：782.12 Kbytes Page：5 Pages	ReflectiveObjectSensor Description: OPB608reflectiveswitchesconsistofaninfraredemittingdevice(LEDorVCSEL)andaNPNsiliconphototransistormounted“sideby-side”onaparallelaxisinablackopaqueplastichousing.AllOPB608’s(exceptOPB608R)haveanemittingdeviceandaphototransistorthatareencapsul	TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司	TTELEC

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供应商	型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	MX608E	MX	23+	SOP8	700000	公主请下单柒号只做原装	询价
深圳市拓亿芯电子有限公司	MX608E	MX	23+	SOP-8	55000	原厂原装假一赔十	询价
深圳市科恒伟业电子有限公司	MX608E	MX	1844+	SOP8	6528	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市粤骏腾电子科技有限公司	MX608E	MX	24+	SOP-8	8888	大批量供应优势库存热卖	询价
讯运(深圳/上海)电子有限公司	MX608E	Mixic(中科芯亿达)	2021+	SO-8	604		询价
深圳市昂芯微科技有限公司	MX608E	MX	23+	SOP-8	8215	原厂原装	询价
深圳市威尔健半导体有限公司	MX608E	MIXIC/中科芯亿达	23+	SOP8	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	MX608E	MIXIC	23+	SOP8	50000	全新原装正品现货,支持订货	询价
深圳市创盛芯科技有限公司	MX608E	MIXIC/中科芯亿	22+	SOP-8	36000	原装现货假一赔十	询价
深圳廊盛科技有限公司	MX608E	MIXIC/中科芯亿达	2022	SOP8	80000	原装现货,OEM渠道,欢迎咨询	询价

更多MX608E供应商更新时间2024-9-22 13:00:00

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