| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1024-Word x 4-Bit LSI Static RAM Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output 文件:29.33 Kbytes 页数:7 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output 文件:29.33 Kbytes 页数:7 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output 文件:29.33 Kbytes 页数:7 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output 文件:29.33 Kbytes 页数:7 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM 文件:113.94 Kbytes 页数:8 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM 文件:113.94 Kbytes 页数:8 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM 文件:113.94 Kbytes 页数:8 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM 文件:113.94 Kbytes 页数:8 Pages | Intersil | Intersil | ||
1024-Word x 4-Bit LSI Static RAM Description\nThe MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and • Fully Static Operation\n• Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types)\n• Common Data Input and Output\n• Memory Retention for Standby Battery Voltage as Low as 2V Min\n• All Inputs and Outputs Directly TTL Compatible\n• Three-State Outputs\n• Low Standb; | Renesas 瑞萨 | Renesas |
详细参数
- 型号:
MWS5114D
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
1024-Word x 4-Bit LSI Static RAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
2025+ |
DIP |
3485 |
全新原装、公司现货热卖 |
询价 | ||
HAR |
24+ |
DIP18 |
2 |
询价 | |||
HARRIS |
18+ |
DIP |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
HARRIS/哈里斯 |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HAR |
23+ |
DIP-18 |
17357 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
HARRIS |
22+ |
DIP |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
HARRIS |
98+ |
DIP |
320 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
HARRIS/哈里斯 |
22+ |
DIP |
11190 |
原装正品 |
询价 | ||
HARRIS |
25+ |
DIP |
11343 |
只做原装进口!正品支持实单! |
询价 | ||
HARRIS |
23+ |
2800 |
正品原装货价格低 |
询价 |
相关规格书
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- MWTZ100-10-C
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- MWTZ100-4-D
- MWTZ100-7-C
- MWU4002S-NL
- MX 122-50802
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- MX 222-5084
- MX004
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- MX004P
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- MX009
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- MX013QALH
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- MX029DW
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相关库存
更多- MWS5114D3
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- MWS6524
- MWS6548
- MWS-ORANGE
- MWS-RED
- MWSSEB-1-01A-RT
- MWSSEBE-1-01A
- MWSWC19100J501
- MWT0198
- MWT733X
- MWT801
- MWT801-S
- MWT824X
- MWT-A973
- MWTM-10/3-1200-S(B25)
- MWTZ100-12-C
- MWTZ100-3-D
- MWTZ100-6-C
- MWU4002S
- MWU4505
- MX 122-50803
- MX 122-50806
- MX 222-50808
- MX0001-M
- MX0044HD
- MX004LH
- MX0057CX
- MX0058HDL
- MX0059HDL
- MX009J
- MX009P
- MX013QCLH
- MX014J
- MX014P
- MX019DW
- MX019P
- MX029TN
- MX-041
- MX043G
- MX043J

