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MWS5114D1

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件:29.33 Kbytes 页数:7 Pages

Intersil

MWS5114D2

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件:29.33 Kbytes 页数:7 Pages

Intersil

MWS5114D3

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件:29.33 Kbytes 页数:7 Pages

Intersil

MWS5114D3X

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

文件:29.33 Kbytes 页数:7 Pages

Intersil

MWS5114D1

1024-Word x 4-Bit LSI Static RAM

文件:113.94 Kbytes 页数:8 Pages

Intersil

MWS5114D2

1024-Word x 4-Bit LSI Static RAM

文件:113.94 Kbytes 页数:8 Pages

Intersil

MWS5114D3

1024-Word x 4-Bit LSI Static RAM

文件:113.94 Kbytes 页数:8 Pages

Intersil

MWS5114D3X

1024-Word x 4-Bit LSI Static RAM

文件:113.94 Kbytes 页数:8 Pages

Intersil

MWS5114D1

1024-Word x 4-Bit LSI Static RAM

Description\nThe MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and • Fully Static Operation\n• Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types)\n• Common Data Input and Output\n• Memory Retention for Standby Battery Voltage as Low as 2V Min\n• All Inputs and Outputs Directly TTL Compatible\n• Three-State Outputs\n• Low Standb;

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详细参数

  • 型号:

    MWS5114D

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    1024-Word x 4-Bit LSI Static RAM

供应商型号品牌批号封装库存备注价格
HARRIS
2025+
DIP
3485
全新原装、公司现货热卖
询价
HAR
24+
DIP18
2
询价
HARRIS
18+
DIP
85600
保证进口原装可开17%增值税发票
询价
HARRIS/哈里斯
23+
DIP
50000
全新原装正品现货,支持订货
询价
HAR
23+
DIP-18
17357
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HARRIS
22+
DIP
12245
现货,原厂原装假一罚十!
询价
HARRIS
98+
DIP
320
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
HARRIS/哈里斯
22+
DIP
11190
原装正品
询价
HARRIS
25+
DIP
11343
只做原装进口!正品支持实单!
询价
HARRIS
23+
2800
正品原装货价格低
询价
更多MWS5114D供应商 更新时间2025-12-26 15:00:00