Memory and memory interfaces

文件：1.12915 Mbytes 页数：65 Pages

恩XP

NCE N-Channel Enhancement Mode Power MOSFET

文件：351.81 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：513.47 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2004Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =4A RDS(ON)

文件：283.14 Kbytes 页数：7 Pages

NCEPOWER

新洁能