首页 >MWCT2004SFVLHPR>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

NCE2004NE

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE2004NE

DualN-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NCE2004Y

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE2004Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=20V,ID=4A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCS2004

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCS2004A

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCS2004AMUTAG

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCS2004MUTAG

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NMA-2004

NMA2000NOISESOURCESERIES

MICRONETICS

Micronetics, Inc.

NSNJ2004

428MHzLowPowerTransceiver

NJRCNew Japan Radio

新日本无线株式会社

NTE2004

IntegratedCircuitDolbyNoiseReductionCircuit

Description: TheNTE2004isamonolithicaudionoisereductioncircuitina16–LeadDIPtypepackagedesignedforuseinDolbyB–Typenoisereductionsystems.Thisdeviceisusedtoreducethelevelofbackgroundnoiseintroducedduringrecordingandplaybackofaudiosignalsonmagnetictape

NTE

NTE Electronics

供应商型号品牌批号封装库存备注价格