RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC930N wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 960 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. Features • Characterized with Series Equivalent Large--Si

文件：675 Kbytes 页数：22 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.0693 Mbytes 页数：22 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14836 Mbytes 页数：22 Pages

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Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V

The MW7IC930NR1, MW7IC930GNR1 and MW7IC930NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 728 to 960 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• 225°C Capable Pl;

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