RF Power Field Effect Transistors

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RF Power Field Effect Transistors

文件：916.42 Kbytes 页数：21 Pages

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RF Power Field Effect Transistors

文件：916.42 Kbytes 页数：21 Pages

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：841.46 Kbytes 页数：21 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V

The MW7IC2425NR1, MW7IC2425GNR1 and MW7IC2425NBR1 are designed primarily for CW large-signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 Watts CW, f = 2450 MHzPower Gain: 27.7 dBPower Added Efficiency: 43.8%\n• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW Output Power\n• Qualified Up to a Maximum of 28 VDD Operation\n• Integrated Qu;

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