MW7IC2040N

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2040Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom1805to1990MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformats.

ETC

MW7IC2040N

1930-1990 MHz，1805-1880 MHz，4 W平均值，28 V，单载波W-CDMA，GSM EDGE，GSM LDMOS宽带射频集成功率放大器; • Typical Single-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probabilityon CCDF.• Power Gain: 32 dB\n• Power Added Efficiency: 17.5%\n• ACPR @ 5 MHz Offset: –50 dBc in 3.84 MHz Bandwidth\n• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)\n• Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 40 Watts CW Pout.\n• Typical Pout @ 1 dB Compression Point ≃ 30 Watts CW\nGSM EDGE Application• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 16 Watts Avg., 1805–1880 MHz• Power Gain: 33 dB\n• Power Added Efficiency: 35%\n• Spectral Regrowth @ 400 kHz Offset = –62 dBc\n• Spectral Regrowth @ 600 kHz Offset = –77 dBc\n• EVM: 1.5% rms\nGSM Application• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 Watts CW, 1805–1880 MHz and 1930–1990 MHz• Power Gain: 31 dB\n• Power Added Efficiency: 50%\n• Characterized with Series Equivalent Large–Signal Impedance Parametersand Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• 225°C Capable Plastic Package\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.\n;

The MW7IC2040NR1, MW7IC2040GNR1 and MW7IC2040NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations.\n

ETC

MW7IC2040NB

Single W-CDMA, GSM/EDGE, RF LDMOS Wideband Integrated PA, 1930-1990 MHz, 1805-1880 MHz, 4 W, 28 V; • Typical Single-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probabilityon CCDF.• Power Gain: 32 dB\n• Power Added Efficiency: 17.5%\n• ACPR @ 5 MHz Offset: –50 dBc in 3.84 MHz Bandwidth\n• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)\n• Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 40 Watts CW Pout.\n• Typical Pout @ 1 dB Compression Point ≃ 30 Watts CW\nGSM EDGE Application• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 16 Watts Avg., 1805–1880 MHz• Power Gain: 33 dB\n• Power Added Efficiency: 35%\n• Spectral Regrowth @ 400 kHz Offset = –62 dBc\n• Spectral Regrowth @ 600 kHz Offset = –77 dBc\n• EVM: 1.5% rms\nGSM Application• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 Watts CW, 1805–1880 MHz and 1930–1990 MHz• Power Gain: 31 dB\n• Power Added Efficiency: 50%\n• Characterized with Series Equivalent Large–Signal Impedance Parametersand Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• 225°C Capable Plastic Package\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.\n;

The MW7IC2040NR1, MW7IC2040GNR1 and MW7IC2040NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations.\n

ETC

MW7IC2040NBR1

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2040Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom1805to1990MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformats.

MW7IC2040NBR1

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2040Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom1805to1990MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformats.

ETC

MW7IC2040NR1

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2040Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom1805to1990MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformats.

MW7IC2040NR1

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2040Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom1805to1990MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformats.

ETC