RF LDMOS Integrated Power Amplifier

文件：489.63 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Integrated Power Amplifier

文件：494 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Integrated Power Amplifier

文件：726.22 Kbytes 页数：12 Pages

恩XP

2450 MHz, 20 W, 28 V CW RF LDMOS Integrated Power Amplifier

Overview The MW6IC2420NBR1 integrated circuit is designed with on-chip matching that makes it usable at 2450 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats.\nArchived content is no longer updated and i \nDriver Application\n•Typical CW Performance at 2450 MHz: VDD = 28 Volts, \nIDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts\nPower Gain: 19.5 dB\nPower Added Efficiency: 27%\n\n•Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power\n\n•Stable into a 3:1 VSWR. All Spurs Below ;

恩XP

RF LDMOS Integrated Power Amplifier

文件：494 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体