RF LDMOS Wideband Integrated Power Amplifiers

文件：485.59 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：989.74 Kbytes 页数：22 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：989.74 Kbytes 页数：22 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：485.59 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz, 4.5 W Avg., 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Overview The MW6IC2240NBR1 and MW6IC2240GNBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110 to 2170 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats including TD-SCDM \nFinal Application\n•Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., \nf = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 28 dB\n\tPower Added Efficiency: 15%\nIM3 @ 10 MHz Offset: –43;

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