MW6IC2240N

2110-2170 MHz, 4.5 W Avg., 28 V 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers; \nFinal Application\n•Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., \nf = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 28 dB\n\tPower Added Efficiency: 15%\nIM3 @ 10 MHz Offset: –43 dBc in 3.84 MHz Bandwidth\nACPR @ 5 MHz Offset: –46 dBc in 3.84 MHz Bandwidth\n\nDriver Application\n•Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, \nIDQ1 = 300 mA, IDQ2 = 320 mA, Pout = 25 dBm, \nFull Frequency Band (2110–2170 MHz), Channel Bandwidth = 3.84 MHz, \nPAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 29 dB\nIM3 @ 10 MHz Offset: –59 dBc in 3.84 MHz Bandwidth\nACPR @ 5 MHz Offset: –62 dBc in 3.84 MHz Bandwidth\n\n•Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power\n\n•Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 10 W CW Pout.\n\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\nand Common Source Scattering Parameters\n\n•On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)\n\n•Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n\n•Integrated ESD Protection\n\n•225°C Capable Plastic Package\n\n•RoHS Compliant.\n\n•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.\n\n;

Overview The MW6IC2240NBR1 and MW6IC2240GNBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 2110 to 2170 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats including TD-SCDMA.\nArchived content is no longer updated and is made available for historical reference only.\n

MW6IC2240N

RF LDMOS Wideband Integrated Power Amplifiers

MW6IC2240NBR1

RF LDMOS Wideband Integrated Power Amplifiers