RF LDMOS Wideband 2-Stage Power Amplifiers

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freescaleFreescale Semiconductor, Inc

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RF LDMOS Wideband 2-Stage Power Amplifiers

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freescaleFreescale Semiconductor, Inc

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RF LDMOS Wideband 2-Stage Power Amplifiers

文件：398.89 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

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RF LDMOS Wideband 2-Stage Power Amplifiers

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RF LDMOS Wideband 2-Stage Power Amplifiers

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RF LDMOS Wideband 2-Stage Power Amplifiers

文件：407.5 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

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RF LDMOS Wideband 2-Stage Power Amplifiers

文件：398.89 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

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RF LDMOS Wideband 2-Stage Power Amplifier, 800-900 MHz, 70 W, 28 V

The MW5IC970NBR1 and MW5IC970GNBR1 are designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equip • Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 Watts PEPPower Gain: 30 dBDrain Efficiency: 48%\n• Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW Output Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Integrated Q;

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