RF LDMOS Wideband Integrated Power Amplifiers

文件：955.21 Kbytes 页数：18 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：955.21 Kbytes 页数：18 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：686.29 Kbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：334.69 Kbytes 页数：16 Pages

MOTOROLA

摩托罗拉

RF LDMOS Wideband Integrated Power Amplifiers

文件：686.29 Kbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its\nwideband On-Chip design makes it usable from 750 to 1000 MHz. The linearity per \nFinal Application\nTypical Performance: VDD = 26 Volts, IDQ1 = 60 mA, \nIDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860–960 MHz)\nPower Gain = 30 dB\nPower Added Efficiency = 44%\n\nDriver Application\nTypical GSM/GSM EDGE Performances: VDD = 26 Volts,\nIDQ1 = 60 mA, IDQ2 = 240 mA,;

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