5x7 mm, 3.3 or 5.0 Volt, HCMOS, VCXO

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MTRONPTI

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi

文件：21.37 Kbytes 页数：2 Pages

NTE

4W High Power Laser Diode

Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 4.0W • High-optical power output density: 4W

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SONYSony Corporation

索尼

NAND Gates

General Description The 325 and 326 each contain two 2-input gates and two 3-input gates. The active pullup and 5mA output drive current of the 325 allow it to drive moderately long lines with no loss of noise immunity. The 326 has passive pullup resistors on the chip, so that outputs may be coll

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MICROSEMI

美高森美