MV32006数据手册分立半导体产品的二极管-可变电容（变容器可变电抗器）规格书PDF

描述 Description

Microsemi's GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at Microsemi by the Chemical Vapor Deposition technique. The layers are processed at using proprietary techniques resulting in varactors with constant gamma , high Q factor and repeatable tuning curves. These varactors are available in a variety of microwave ceramic packages or bondable chips for operation from UHF to millimeter wave frequencies.

简介

MV32006属于分立半导体产品的二极管-可变电容（变容器可变电抗器）。由制造生产的MV32006二极管 - 可变电容（变容器，可变电抗器）可变电容二极管可按照电子可变电容器用途进行生产和分类，并且广泛用于调谐和频率合成应用。虽然大多数二极管的结电容都随着所施加的反向偏压增加而减小，并且能够用作可变电容二极管，但专门作为此类器件销售的产品在生产和分类时特别考虑了这种用途。