8.0 Amperes/1200Volts Isolated Package Ultra Fast Recovery Rectifiers

文件：1.01856 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

8.0 Amperes/1200Volts Isolated Package Ultra Fast Recovery Rectifiers

ThinkiSemi

思祁半导体

Full-Mold, Separate Excitation Switching Type

■ Features • Compact full-mold package (equivalent to TO220) • High efficiency: 80 • Requires only 4 discrete components • Internally-adjusted phase correction and output voltage • Built-in reference oscillator (60kHz) • Built-in overcurrent and thermal protection circuits ■

文件：41.73 Kbytes 页数：4 Pages

SANKEN

三垦

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

文件：371.8 Kbytes 页数：40 Pages

NEC

瑞萨

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

文件：550.61 Kbytes 页数：52 Pages

NEC

瑞萨