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MURTA20060R

SiliconSuperFastRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

MURTA20060R

SiliconSuperFastRecoveryDiode

GENESIC

GeneSiC Semiconductor, Inc.

PNE20060CPE

200V,2x3Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤3A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20060CPE-Q

200V,2x3Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤3A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20060CPE-QZ

200V,2x3Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤3A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20060CPEZ

200V,2x3Adualcommoncathodehyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤3A(perdiode) •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20060EPE

200V,6Ahyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤6A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20060EPE-Q

200V,6Ahyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤6A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20060EPE-QZ

200V,6Ahyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤6A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNE20060EPEZ

200V,6Ahyperfastrecoveryrectifier

Featuresandbenefits •Reversevoltage:VR≤200V •Forwardcurrent:IF≤6A •Switchingtime:trr≤30ns •Ptdopedlifetimecontrol •Lowinductance •PowerandflatleadSMDplasticpackage •Packageheighttypical0.95mm •Highpowercapabilityduetoclip-bondtechnology •Plan

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

产品属性

  • 产品编号:

    MURF20060R

  • 制造商:

    GeneSiC Semiconductor

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 包装:

    散装

  • 二极管配置:

    1 对共阳极

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io)(每二极管):

    100A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -55°C ~ 150°C

  • 安装类型:

    底座安装

  • 封装/外壳:

    TO-244AB

  • 供应商器件封装:

    TO-244AB

  • 描述:

    DIODE MODULE 600V 100A TO244AB

供应商型号品牌批号封装库存备注价格
GeneSiC
1935+
N/A
55
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询价
GENESIC
1809+
TO-244
96
就找我吧!--邀您体验愉快问购元件!
询价
GeneSiC
22+
NA
55
加我QQ或微信咨询更多详细信息,
询价
GeneSiC Semiconductor
22+
TO244AB
9000
原厂渠道,现货配单
询价
GeneSiC Semiconductor
25+
TO-244AB
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
SSG
24+
TO-220F
5000
全现原装公司现货
询价
SSG
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
FUJITSU/富士通
23+
TO-220F-2
16319
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SSG
09+
TO-220F
8430
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SSG
TO-220F
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
更多MURF20060R供应商 更新时间2025-5-20 10:19:00