Switch-Mode Power Rectifiers

These state−of−the−art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 25 ns, 50 ns and 75 ns Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature G

文件：194.45 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

SWITCHMODE TM Power Rectifiers

文件：67.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

文件：118.9 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

文件：21.48 Kbytes 页数：2 Pages

NTE

NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode External dimensions D • • • STA (10-pin)

文件：19.11 Kbytes 页数：1 Pages

SANKEN

三垦

SINGLE CHANNEL HIGH SIDE SMART SOLID STATE RELAY

DESCRIPTION The VN460SP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side connected to ground. Built-in thermal shut-down protects the chip from over temperature and short circuit. The control inp

文件：76.76 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体