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AQV410EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV410EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQW410EHA

PhotoMOSRelayDimensions

etc2List of Unclassifed Manufacturers

etc2未分类制造商

AQY410EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY410EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQY410EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY410EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQY410EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQY410EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY410EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY410EHAZ

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQY410SX

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQY410SZ

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AT-410

FixedAttenuators(N,BNC,TNC)

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

AT-410(40)

50ohmswidevarietiesstandardconnectors

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

ATN410

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

未分类制造商

BCL-410

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕公司MOLEX莫仕公司

BCL-410-PL

CompressionStyleRingTongueTerminalfor4AWGWire,StudSize10,Plated

MOLEX4Molex Electronics Ltd.

莫仕公司MOLEX莫仕公司

BCL-410-PL

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕公司MOLEX莫仕公司

BCR410

ActiveBiasController

ActiveBiasController Characteristics ●Suppliesstablebiascurrentfrom1.8Voperatingvoltageon ●Lowvoltagedrop:110mVfor10mAcollectorcurrrent Applicationnotes ●StabilizingbiascurrentofNPNtransistorsandFETsfrom100µAto20mA ●IdealsupplementforSiegetandothertrans

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    MUR410RLG

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    SWITCHMODE™

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    4A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-201AA,DO-27,轴向

  • 供应商器件封装:

    轴向

  • 工作温度 - 结:

    -65°C ~ 175°C

  • 描述:

    DIODE GEN PURP 100V 4A DO201AD

供应商型号品牌批号封装库存备注价格
ON(安森美)
23+
标准封装
12257
全新原装正品/价格优惠/质量保障
询价
ON
16+/17+
DO201AD
78000
渠道现货库存-原装正品
询价
ON
24+
DO201AD
69000
询价
ON/安森美
23+
N/A
25850
新到现货,只有原装
询价
ONSEMI
2022+
NA
815
原厂原装
询价
ON
2016+
DO-201AD
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
ON
11+
309
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
ON
23+
DO-201AD
7750
全新原装优势
询价
MOTOROLA
16+
7860
原装现货假一罚十
询价
ON
1436+
DIP
30000
绝对原装进口现货可开增值税发票
询价
更多MUR410RLG供应商 更新时间2024-5-29 10:39:00