ULTRA FSAT RECTlFIER

VOL TAGE RANGE 50 - 600 Volts CURRENT 30 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction , positive centertap • Glass passivated chip junctions • Low power loss • Low forward voltage, high curr

文件：2.77509 Mbytes 页数：2 Pages

KISEMICONDUCTOR

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：59.06 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：59.06 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：59.06 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体