MUPTB24E3中文资料PDF规格书
厂商型号 |
MUPTB24E3 |
参数属性 | MUPTB24E3 封装/外壳为DO-216AA;包装为散装;类别为电路保护 > TVS - 二极管;MUPTB24E3应用范围:通用;产品描述:TVS DIODE 24VWM 43.2VC POWERMIT1 |
功能描述 | 5V – 48V Powermite1, Surface Mount Transient Voltage Suppressors |
文件大小 |
458.33 Kbytes |
页面数量 |
5 页 |
生产厂商 | Microsemi Corporation |
企业简称 |
Microsemi【美高森美】 |
中文名称 | 美高森美公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-21 18:26:00 |
MUPTB24E3规格书详情
DESCRIPTION
Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature
oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible
electrical degradation under repeated surge conditions. Both unidirectional and bidirectional
configurations are available. In addition to its size advantages, the Powermite package includes a
fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at
assembly and a unique locking tab design serves as an integral heat sink. Its innovative design
makes this device fully compatible for use with automatic insertion equipment.
FEATURES
Powermite package with standoff voltages 5 to 48 V.
Both unidirectional and bidirectional polarities:
-Anode to case bottom (MUPT5e3 thru MUPT48e3)
-Bidirectional (MUPTB5e3 thru MUPTB48e3)
Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.
100 surge current testing of all parts.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
Both RoHS and non-RoHS compliant versions available.
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
Protection from switching and induced RF transients.
-Integral heat sink / locking tabs
-Fully metallic bottom side eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: MUPT5 /MUPTB8 to 17
Class 2: MUPT5 /MUPTB5 to 12
产品属性
- 产品编号:
MUPTB24E3
- 制造商:
Microchip Technology
- 类别:
电路保护 > TVS - 二极管
- 包装:
散装
- 类型:
齐纳
- 电压 - 反向断态(典型值):
24V
- 电压 - 击穿(最小值):
28.4V
- 不同 Ipp 时电压 - 箝位(最大值):
43.2V
- 电流 - 峰值脉冲 (10/1000µs):
3.47A
- 功率 - 峰值脉冲:
1000W(1kW)
- 电源线路保护:
无
- 应用:
通用
- 工作温度:
-65°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
DO-216AA
- 供应商器件封装:
Powermite 1(DO216-AA)
- 描述:
TVS DIODE 24VWM 43.2VC POWERMIT1