MUN5113DW1分立半导体产品的晶体管-双极（BJT）-阵列-预偏置规格书PDF中文资料

MUN5113DW1属于分立半导体产品的晶体管-双极（BJT）-阵列-预偏置。由安森美半导体公司制造生产的MUN5113DW1晶体管 - 双极（BJT）- 阵列 - 预偏置预偏置的双极晶体管阵列包含两个或更多双极晶体管，同时电阻以可能有用的方式连接到每个晶体管；通常在每个晶体管的发射极和基极端子之间有一个电阻，同时有另一个电阻连接到每个晶体管的基极端子和器件封装上的用户可访问引脚。

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single

device. In the MUN5111DW1T1 series,two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Pb−Free Packages are Available