TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM mot

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Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N?묬hannel Power MOSFET

文件：169.5 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM

恩XP

恩智浦