TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require sur

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Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Power Field Effect Transistor

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ONSEMI

安森美半导体

Power Field Effect Transistor

ONSEMI

安森美半导体