Silicon Abrupt Tuning Varactor Diodes

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4090G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =90A RDS(ON)

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NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =90A RDS(ON) =4.2mΩ @ VGS=10V (Typ) RDS(ON) =7.2mΩ @ VGS=4.5V (Typ) ● High density cell

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NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4090AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEPOWER

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