MTP4N40E中文资料TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM数据手册恩XP规格书
MTP4N40E规格书详情
描述 Description
T MOS E-FET™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon GateThis high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
技术参数
- 型号：
MTP4N40E
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 400V 4A 3-Pin(3+Tab) TO-220
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
PG-TO220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
询价 | ||
MOTOLA |
23+ |
2800 |
正品原装货价格低 |
询价 | |||
MOT |
06+ |
TO-220 |
3000 |
原装库存 |
询价 | ||
ON |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
onsemi(安森美) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON |
24+ |
N/A |
2150 |
询价 | |||
ON |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON |
22+ |
TO220 |
3000 |
原装正品,支持实单 |
询价 | ||
ON/安森美 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 |
