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MTP10N10EL数据手册恩XP中文资料规格书
MTP10N10EL规格书详情
描述 Description
Logic Level TMOS E-FET™ Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon GateThis advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
技术参数
- 型号：
MTP10N10EL
- 功能描述：
MOSFET 100V 10A Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ON |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ON |
23+ |
TO-220 |
15000 |
专做原装正品,假一罚百! |
询价 | ||
MOT |
06+ |
TO-220 |
3000 |
原装 |
询价 | ||
ON |
2025+ |
TO-220AB |
3577 |
全新原厂原装产品、公司现货销售 |
询价 | ||
VBSEMI/微碧半导体 |
24+ |
TO220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
ON |
24+ |
TO-220 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
询价 | ||
ON/安森美 |
23+ |
TO-TO-220 |
15400 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON |
24+ |
N/A |
2380 |
询价 | |||
ON |
17+ |
TO-220 |
6200 |
询价 |
