NJ4N60-LI

4.0A600VN-CHANNELPOWERMOSFET

FEATURES *VDS=600V *ID=4.0A *RDS(ON)=2.Ω@VGS=10V. *UltraLowgatecharge(typical15nC) *Lowreversetransfercapacitance(CRSS=typical8.0pF) *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

NJ4N60-LI

4.0A600VN-CHANNELPOWERMOSFET

P4N60FI

N-Channel650V(D-S)MOSFET

PHB4N60E

PowerMOStransistorsAvalancheenergyrated

PHP4N60E

PowerMOStransistorsAvalancheenergyrated

PHP4N60E

N-Channel650V(D-S)MOSFET

PHP4N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHX4N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES •Repet

PHX4N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PJF4N60

600VN-ChannelEnhancementModeMOSFET